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1N5908
1500 Watt MosorbTM Zener Transient Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor's exclusive, cost-effective, highly reliable SurmeticTM axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits.
Specification Features: http://onsemi.com
Cathode
Anode
* * * * *
Working Peak Reverse Voltage Range - 5 V Peak Power - 1500 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V Response Time is Typically < 1 ns
AXIAL LEAD CASE 41A PLASTIC
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
L 1N 5908 YYWW L = Assembly Location 1N5908 = JEDEC Device Code YY = Year WW = Work Week
230C, 1/16 from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Peak Power Dissipation (Note 1.) @ TL 25C Steady State Power Dissipation @ TL 75C, Lead Length = 3/8 Derated above TL = 75C Thermal Resistance, Junction-to-Lead Forward Surge Current (Note 2.) @ TA = 25C Operating and Storage Temperature Range Symbol PPK PD Value 1500 5.0 50 RqJL IFSM TJ, Tstg 20 200 - 65 to +175 Unit Watts
ORDERING INFORMATION
Watts mW/C C/W Amps C Device 1N5908 1N5908RL4 Package Axial Lead Axial Lead Shipping 500 Units/Box 1500/Tape & Reel
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25C per Figure 2. 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. * Bidirectional device will not be available in this device
(c) Semiconductor Components Industries, LLC, 2002
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February, 2002 - Rev. 3
Publication Order Number: 1N5908/D
1N5908
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A) Symbol IPP VC VRWM IR VBR IT IF VF Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF IPP VC VBR VRWM IR VF IT V IF I
Uni-Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 53 A)
VRWM (Note 5.) (Volts) 5.0 Breakdown Voltage IR @ VRWM (A) 300 VBR Min 6.0 (Note 6.) (Volts) Nom - Max - @ IT (mA) 1.0 @ IPP = 120 A 8.5 @ IPP = 60 A 8.0 @ IPP = 30 A 7.6 VC (Volts) (Note 7.)
Device (Note 4.) 1N5908
NOTES: 3. Square waveform, PW = 8.3 ms, Non-repetitive duty cycle. 4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option) 5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. VBR measured at pulse test current IT at an ambient temperature of 25C and minimum voltages in VBR are to be controlled. 7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data - 1500 W at the beginning of this group
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1N5908
PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA= 25 C 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C)
10
1
0.1 s
1 s
10 s
100 s tP, PULSE WIDTH
1 ms
10 ms
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (C) 200 0 0 3/8 100 VALUE (%)
tr 10 s PEAK VALUE - IPP
PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP.
HALF VALUE 50 tP 1 2
IPP 2
3 t, TIME (ms)
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Figure 3. Steady State Power Derating
Figure 4. Pulse Waveform
1 0.7 0.5 0.3 DERATING FACTOR 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 10 s 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms
1 ms 100 s
Figure 5. Typical Derating Factor for Duty Cycle
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1N5908
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 6. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 7. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 5. Average power must be derated as the lead or ambient temperature rises above 25C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 5 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. However, when the derating factor for a given pulse of Figure 5 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V
Vin (TRANSIENT) VL
V
OVERSHOOT DUE TO INDUCTIVE EFFECTS
Vin (TRANSIENT) VL
Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 6.
Figure 7.
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1N5908
CLIPPER BIDIRECTIONAL DEVICES 1. Clipper-bidirectional devices are available in the 1.5KEXXA series and are designated with a "CA" suffix; for example, 1.5KE18CA. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for VF which does not apply). 3. The 1N6267A through 1N6303A series are JEDEC registered devices and the registration does not include a "CA" suffix. To order clipper-bidirectional devices one must add CA to the 1.5KE device title.
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1N5908
OUTLINE DIMENSIONS
Transient Voltage Suppressors - Axial Leaded
1500 Watt Mosorb
MOSORB CASE 41A-04 ISSUE D
B D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A-01 THRU 041A-03 OBSOLETE, NEW STANDARD 041A-04. INCHES MIN MAX 0.335 0.374 0.189 0.209 0.038 0.042 1.000 ----0.050 MILLIMETERS MIN MAX 8.50 9.50 4.80 5.30 0.96 1.06 25.40 ----1.27
K P P
A
DIM A B D K P
K
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1N5908
Notes
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1N5908
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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1N5908/D
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